CuCrIn2S6 crystals CuCrIn2S6 crystals CuCrIn2S6 crystals

CuCrIn2S6 crystals

$590.00

CuCrIn2S6 is a layered material that exhibits ferromagnetic and ferroelectric (overall multiferroic) order in the monolayer limit[ 1]. CuCrIn2S6 consists of a chalcogenide (sulfur) framework with the octahedral sites filled by Cu, Cr, and P–P in a triangular pattern. It has been predicted that these material exhibit band gap values ranging from 1.0 eV to 1.4 eV in the monolayer form. Our CuCrIn2S6 crystals has been primary grown by flux zone growth technique which is free of any transporting agents, and thus flux zone grown crystals are crystallized better and contains less far less defects compared to chemical vapor transport (CVT) grown materials. By default our R&D team will ship flux grown samples but we can offer lower grade CVT grown samples on-demand. 

Overall properties of CuCrIn2S6 crystals

CuCrIn2S6 properties

XRD dataset collected from CuCrIn2S6 crystals

CuCrIn2S6 XRD

References

[1] J. Qi, H. Wang, X. Chen, and X. Qian Appl. Phys. Lett. 113, 043102 (2018)

 

 

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    CuCrIn2S6 is a layered material that exhibits ferromagnetic and ferroelectric (overall multiferroic) order in the monolayer limit[ 1]. CuCrIn2S6 consists of a chalcogenide (sulfur) framework with the octahedral sites filled by Cu, Cr, and P–P in a triangular pattern. It has been predicted that these material exhibit band gap values ranging from 1.0 eV to 1.4 eV in the monolayer form. Our CuCrIn2S6 crystals has been primary grown by flux zone growth technique which is free of any transporting agents, and thus flux zone grown crystals are crystallized better and contains less far less defects compared to chemical vapor transport (CVT) grown materials. By default our R&D team will ship flux grown samples but we can offer lower grade CVT grown samples on-demand. 

    Overall properties of CuCrIn2S6 crystals

    CuCrIn2S6 properties

    XRD dataset collected from CuCrIn2S6 crystals

    CuCrIn2S6 XRD

    References

    [1] J. Qi, H. Wang, X. Chen, and X. Qian Appl. Phys. Lett. 113, 043102 (2018)