CVD h-BN - 2x2 inches large area high quality CVD monolayer hexagonal BN sheets - 2Dsemiconductors CVD h-BN - 2x2 inches large area high quality CVD monolayer hexagonal BN sheets - 2Dsemiconductors CVD 2x2 inches monolayer hBN (New) CVD h-BN - 2x2 inches large area high quality CVD monolayer hexagonal BN sheets - 2Dsemiconductors

CVD 2x2 inches monolayer hBN (New)

$490.00

Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size. 

Properties of h-BN

hbn-properties-cvd.png

Raman spectra from h-BN monolayer thick films

hbn-raman-cvd.png

TEM images collected from h-BN sheets suspended on TEM grids

h-bn-tem.png

Full Description
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  • Description

    Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size. 

    Properties of h-BN

    hbn-properties-cvd.png

    Raman spectra from h-BN monolayer thick films

    hbn-raman-cvd.png

    TEM images collected from h-BN sheets suspended on TEM grids

    h-bn-tem.png