Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Multilayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.
Properties of h-BN
Raman spectra from h-BN monolayer thick films
TEM images collected from h-BN sheets suspended on TEM grids