CVD diamond on Silicon CVD diamond on Silicon CVD diamond on Silicon

CVD diamond on Silicon

SKU: CVD-diamond-SI
$560.00

CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point defects in CVD diamond. When N-V centers are successfully introduced, it produces coherent photoluminescence which can be easily detected from an individual N-V center, especially those in the negative charge state (NV-) (see our figures). At 2Dsemiconductors we have developed a synthesis technique considering these attractive properties of NV centers in CVD diamond. Our CVD diamond is produced using chemical vapor deposition (CVD) but the process parameters are optimized by using ionized nitrogen in our CVD chamber to increase the NV center rate. 

This product contains thin-film CVD grown diamond on undoped Si substrates.

The properties of CVD diamond deposited on Si

Sample size 5x5 mm in size on silicon
Band gap 5.7 eV (but emission comes from NV0 and NV-)
Emission lines NV0 ~575 nm and NV- ~ 638 nm
Crystal structure Diamond
Synthesis technique Chemical vapor deposition
Characterization methods PL, SEM,EDS, transmission spectrum

 

The sample geometry of CVD diamond on Silicon

cvd-diamond-on-si.png

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    CVD diamond on Silicon

    CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point defects in CVD diamond. When N-V centers are successfully introduced, it produces coherent photoluminescence which can be easily detected from an individual N-V center, especially those in the negative charge state (NV-) (see our figures). At 2Dsemiconductors we have developed a synthesis technique considering these attractive properties of NV centers in CVD diamond. Our CVD diamond is produced using chemical vapor deposition (CVD) but the process parameters are optimized by using ionized nitrogen in our CVD chamber to increase the NV center rate. 

    This product contains thin-film CVD grown diamond on undoped Si substrates.

    The properties of CVD diamond deposited on Si

    Sample size 5x5 mm in size on silicon
    Band gap 5.7 eV (but emission comes from NV0 and NV-)
    Emission lines NV0 ~575 nm and NV- ~ 638 nm
    Crystal structure Diamond
    Synthesis technique Chemical vapor deposition
    Characterization methods PL, SEM,EDS, transmission spectrum

     

    The sample geometry of CVD diamond on Silicon

    cvd-diamond-on-si.png