Few layer Full Area Coverage MoSe2 Few layer Full Area Coverage MoSe2

Few layer Full Area Coverage MoSe2

$490.00

This product contains full area coverage MoSe2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick MoSe2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements. 

Our company synthesizes these few layers using chemical vapor deposition (CVD) with highest purity (6N) gases and precursors in semiconductor grade facilities. This produces highly crystalline and large domain size samples that range from 1 to 50 microns in lateral sizes. CVD grown samples from other sources typically use MOCVD or sputtering process wherein carbon contamination is problematic, defect density is extremely large, domain sizes are small (10nm-500nm). Our samples are always highly crystallized, high purity, and perfectly layered.

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Substrate of your choice
Coverage Full Coverage few layers
Electrical properties Indirect gap semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.33 nm, c = 1.292 nm, α = β = 90°, γ = 120°
Production method Chemical Vapor Deposition (CVD)
Characterization methods Raman, photoluminescence, TEM, EDS
Full Description
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  • Description

    This product contains full area coverage MoSe2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick MoSe2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements. 

    Our company synthesizes these few layers using chemical vapor deposition (CVD) with highest purity (6N) gases and precursors in semiconductor grade facilities. This produces highly crystalline and large domain size samples that range from 1 to 50 microns in lateral sizes. CVD grown samples from other sources typically use MOCVD or sputtering process wherein carbon contamination is problematic, defect density is extremely large, domain sizes are small (10nm-500nm). Our samples are always highly crystallized, high purity, and perfectly layered.

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type Substrate of your choice
    Coverage Full Coverage few layers
    Electrical properties Indirect gap semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters a = b = 0.33 nm, c = 1.292 nm, α = β = 90°, γ = 120°
    Production method Chemical Vapor Deposition (CVD)
    Characterization methods Raman, photoluminescence, TEM, EDS