Fewlayer hBN on SiO2/Si
Few-layer hBN transferred on SiO2/Si substrates. Full area hBN few-layer were synthesized first using our established CVD growth method on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer assisted stamping technique. Typical hBN measures around 1-2nm in thickness. Sample size measures 1cm in size. Due to the transfer process, the transferred few-layer may contain natural wrinkles and missing patches in some regions. The entire process is carried under Argon backfilled glovebox to ensure high-quality and residue free process. The samples are always sealed under Argon and pumped down to 1E-6 Torr to deliver quality samples for your research.
If your research needs designer 2D superlattices please see our transferred monolayer product line [Link]