Full Area Coverage Few-layer MoS2 Full Area Coverage Few-layer MoS2 Full Area Coverage Few-layer MoS2 Full Area Coverage Few-layer MoS2

Full Area Coverage Few-layer MoS2

$490.00

This product contains full area coverage MoS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick MoS2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements. Please see the datasets in the product images.

Growth method: Our company synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), and products are non-layered. Our samples are always highly crystallized, high purity, and perfectly layered.

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Thermal oxide (SiO2/Si) substrates
Coverage Full Coverage few layers
Electrical properties Indirect gap semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method Chemical Vapor Deposition (CVD)
Characterization methods Raman, photoluminescence, TEM, EDS
Full Description
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  • Description

    This product contains full area coverage MoS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick MoS2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements. Please see the datasets in the product images.

    Growth method: Our company synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), and products are non-layered. Our samples are always highly crystallized, high purity, and perfectly layered.

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type Thermal oxide (SiO2/Si) substrates
    Coverage Full Coverage few layers
    Electrical properties Indirect gap semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
    Production method Chemical Vapor Deposition (CVD)
    Characterization methods Raman, photoluminescence, TEM, EDS