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Few- vs mono-layer thick WSe2 sheets. Few- vs mono-layer thick WSe2 sheets.

Full Area Coverage Few-layer WSe2

SKU: CVD-WSe2-FEW
$490.00

This product contains full area coverage WSe2 few-layers that measure 3-5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick WSe2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements.

Growth method: Our company synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), and products are non-layered. Our samples are always highly crystallized, high purity, and perfectly layered.

Sample Properties

Sample size 1cm x 1cm in size
Substrate type (0001) c-cut sapphire (other substrates on request)
Coverage Full coverage few-layers that measure 3-5 layers 
Electrical properties Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, photoluminescence, TEM, EDS
Full Description
Formula: WSe2
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  • Description

    Full Area Coverage Few-layer WSe2

    This product contains full area coverage WSe2 few-layers that measure 3-5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick WSe2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements.

    Growth method: Our company synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), and products are non-layered. Our samples are always highly crystallized, high purity, and perfectly layered.

    Sample Properties

    Sample size 1cm x 1cm in size
    Substrate type (0001) c-cut sapphire (other substrates on request)
    Coverage Full coverage few-layers that measure 3-5 layers 
    Electrical properties Semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
    Production method Low pressure Chemical Vapor Deposition (LPCVD)
    Characterization methods Raman, photoluminescence, TEM, EDS

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