Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage MoS2 on SiO2/Si confirming Mo:S 1:2 ratios Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on SiO2/Si. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature. Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on SiO2/Si confirming highly crystalline nature of monolayers Full Area Coverage Monolayer MoS2 on SiO2/Si

Full Area Coverage Monolayer MoS2 on SiO2/Si

SKU: CVD-MoS2-ML-S
$490.00

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity. 

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Thermal oxide (SiO2/Si) substrates
Coverage Full Coverage Monolayer
Electrical properties 1.85 eV Direct Bandgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods Raman, photoluminescence, TEM, EDS

 

Specification.

  • Identification. Full coverage 100% monolayer MoS2 uniformly covered across SiO2/Si substrates
  • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
  • Smoothness. Atomically smooth surface with roughness < 0.2 nm.
  • Uniformity. Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.
  • Purity. 99.9995% purity as determined by nano-SIMS measurements
  • Reliability. Repeatable Raman and photoluminescence response
  • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
  • Substrate. SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.
  • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. We give full technical support and guarantee your satisfaction with our well-established customer
  • Defect profile. MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using a-bombardment technique.

References

ACS Appl. Mater. Interfaces 2020, 12, 30, 34049–34057

Full Description
Formula: MoS2
Qty
  • Description

    Full Area Coverage Monolayer MoS2 on SiO2/Si

    This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity. 

    Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type Thermal oxide (SiO2/Si) substrates
    Coverage Full Coverage Monolayer
    Electrical properties 1.85 eV Direct Bandgap Semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
    Production method Atmospheric Pressure Chemical Vapor Deposition (APCVD)
    Characterization methods Raman, photoluminescence, TEM, EDS

     

    Specification.

    • Identification. Full coverage 100% monolayer MoS2 uniformly covered across SiO2/Si substrates
    • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
    • Smoothness. Atomically smooth surface with roughness < 0.2 nm.
    • Uniformity. Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.
    • Purity. 99.9995% purity as determined by nano-SIMS measurements
    • Reliability. Repeatable Raman and photoluminescence response
    • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
    • Substrate. SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.
    • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. We give full technical support and guarantee your satisfaction with our well-established customer
    • Defect profile. MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using a-bombardment technique.

    References

    ACS Appl. Mater. Interfaces 2020, 12, 30, 34049–34057