Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer SnS2 on c-cut sapphire Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and shows the high crystallinity of the CVD samples. PL spectrum does not show any PL signal due to indirect band nature. Transmission electron images (TEM) acquired from CVD grown full area coverage SnS2 monolayers on c-cut sapphire confirming high crystallinity Full Area Coverage Monolayer SnS2 on c-cut Sapphire Full Area Coverage Monolayer SnS2 on c-cut Sapphire

Full Area Coverage Monolayer SnS2 on c-cut Sapphire

SKU: CVD-SnS2-ML-SP
$490.00

This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnS2 sheet. Synthesized full area coverage monolayer SnS2 is highly crystalline.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). 

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Sapphire c-cut (0001)
Coverage Full monolayer coverage
Electrical properties 2.2 eV Indirect Gap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters

a = b = 0.362, c = 0.590 nm, α = β = 90°, γ = 120°

Production method Low Pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

 

Specification.

  • Identification. Full coverage 100% monolayer SnS2 uniformly covered across c-cut sapphire
  • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
  • Smoothness. Atomically smooth surface with roughness < 0.15 nm.
  • Uniformity. Highly uniform surface morphology. SnS2 monolayers uniformly cover across the sample.
  • Purity. 99.9995% purity as determined by nano-SIMS measurements
  • Reliability. Repeatable Raman and photoluminescence response
  • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
  • Substrate. c-cut Sapphire but our research and development team can transfer SnS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
  • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
  • Defect profile. SnS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnS2 using a-bombardment technique.
Full Description
Formula: SnS2
Qty
  • Description

    Full Area Coverage Monolayer SnS2 on c-cut Sapphire

    This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnS2 sheet. Synthesized full area coverage monolayer SnS2 is highly crystalline.

    Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). 

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type Sapphire c-cut (0001)
    Coverage Full monolayer coverage
    Electrical properties 2.2 eV Indirect Gap Semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters

    a = b = 0.362, c = 0.590 nm, α = β = 90°, γ = 120°

    Production method Low Pressure Chemical Vapor Deposition (LPCVD)
    Characterization methods Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

     

    Specification.

    • Identification. Full coverage 100% monolayer SnS2 uniformly covered across c-cut sapphire
    • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
    • Smoothness. Atomically smooth surface with roughness < 0.15 nm.
    • Uniformity. Highly uniform surface morphology. SnS2 monolayers uniformly cover across the sample.
    • Purity. 99.9995% purity as determined by nano-SIMS measurements
    • Reliability. Repeatable Raman and photoluminescence response
    • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
    • Substrate. c-cut Sapphire but our research and development team can transfer SnS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
    • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
    • Defect profile. SnS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnS2 using a-bombardment technique.