Home > 2D CVD MONOLAYERS > Full Area Coverage Monolayer WS2 on c-cut Sapphire >
Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer WS2 on c-cut sapphire confirming W:S 1:2 ratios Transmission electron images (TEM) acquired from CVD grown full area coverage WS2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage WS2 monolayers on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 2.00 eV in agreement with the literature. Full Area Coverage Monolayer WS2 on c-cut Sapphire Full Area Coverage Monolayer WS2 on c-cut Sapphire

Full Area Coverage Monolayer WS2 on c-cut Sapphire

SKU: CVD-WS2-ML-SP
$490.00

This product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. 

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage monolayer
Electrical properties 2.0 eV Direct Bandgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, photoluminescence, TEM, EDS

 

Specification.

  • Identification. Full coverage 100% monolayer WS2 uniformly covered across c-cut sapphire
  • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
  • Smoothness. Atomically smooth surface with roughness < 0.2 nm.
  • Uniformity. Highly uniform surface morphology. WS2 monolayers uniformly cover across the sample.
  • Purity. 99.9995% purity as determined by nano-SIMS measurements
  • Reliability. Repeatable Raman and photoluminescence response
  • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
  • Substrate. c-cut Sapphire but our research and development team can transfer WS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
  • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
  • Defect profile. WS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected WS2 using a-bombardment technique.
Full Description
Formula: WS2
Qty
  • Description

    Full Area Coverage Monolayer WS2 on c-cut Sapphire

    This product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. 

    Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type (0001) c-cut sapphire
    Coverage Full coverage monolayer
    Electrical properties 2.0 eV Direct Bandgap Semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
    Production method Low pressure Chemical Vapor Deposition (LPCVD)
    Characterization methods Raman, photoluminescence, TEM, EDS

     

    Specification.

    • Identification. Full coverage 100% monolayer WS2 uniformly covered across c-cut sapphire
    • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
    • Smoothness. Atomically smooth surface with roughness < 0.2 nm.
    • Uniformity. Highly uniform surface morphology. WS2 monolayers uniformly cover across the sample.
    • Purity. 99.9995% purity as determined by nano-SIMS measurements
    • Reliability. Repeatable Raman and photoluminescence response
    • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
    • Substrate. c-cut Sapphire but our research and development team can transfer WS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
    • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
    • Defect profile. WS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected WS2 using a-bombardment technique.

Related Products