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PdS2 CVD monolayer large size and high quality PdS2 CVD monolayer large size and high quality

Full Area Coverage PdS2 layers on c-cut Sapphire

SKU: CVD-PdS2-LRS-SP
$490.00

PdS2 is vdW material with excellent catalytic and semiconducting properties. Full area coverage PdS2 layers on c-cut sapphire substrates has been grown using modified chemical vapor deposition technique. Sample size measures 1cm in size and the entire sample surface contains PdS2 sheets.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). 

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Sapphire c-cut (0001)
Coverage Full coverage (mostly few-layers)
Electrical properties Semiconducting, catalytic, 
Crystal structure D2h15 (Pbca)
Unit cell parameters

a= 0.545 nm b=0.554 nm, c = 0.753 nm
Production method Chemical vapor deposition (CVD)
Characterization methods Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

 

Specification.

  • Identification. Full coverage 100% monolayer PdS2 uniformly covered across c-cut sapphire
  • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
  • Smoothness. Atomically smooth surface with roughness < 0.15 nm.
  • Uniformity. Highly uniform surface morphology. PdS2 monolayers uniformly cover across the sample.
  • Purity. 99.9995% purity as determined by nano-SIMS measurements
  • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
  • Substrate. c-cut Sapphire but our research and development team can transfer PdS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
  • Support. 2Dsemiconductors USA is all made in U.S.A, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
  • Defect profile. PdS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected PdS2 using a-bombardment technique.
Full Description
Formula: PdS2
Qty
  • Description

    Full Area Coverage PdS2 layers on c-cut Sapphire

    PdS2 is vdW material with excellent catalytic and semiconducting properties. Full area coverage PdS2 layers on c-cut sapphire substrates has been grown using modified chemical vapor deposition technique. Sample size measures 1cm in size and the entire sample surface contains PdS2 sheets.

    Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). 

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type Sapphire c-cut (0001)
    Coverage Full coverage (mostly few-layers)
    Electrical properties Semiconducting, catalytic, 
    Crystal structure D2h15 (Pbca)
    Unit cell parameters

    a= 0.545 nm b=0.554 nm, c = 0.753 nm
    Production method Chemical vapor deposition (CVD)
    Characterization methods Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

     

    Specification.

    • Identification. Full coverage 100% monolayer PdS2 uniformly covered across c-cut sapphire
    • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
    • Smoothness. Atomically smooth surface with roughness < 0.15 nm.
    • Uniformity. Highly uniform surface morphology. PdS2 monolayers uniformly cover across the sample.
    • Purity. 99.9995% purity as determined by nano-SIMS measurements
    • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
    • Substrate. c-cut Sapphire but our research and development team can transfer PdS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
    • Support. 2Dsemiconductors USA is all made in U.S.A, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
    • Defect profile. PdS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected PdS2 using a-bombardment technique.

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