Description
Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure. It exhibits 2.7 eV and ideal band alignment to oxidization and reduction energy levels for hydrogen evolution reactions and catalytic sciences. Our products has an excellent thermal and chemical stability in ambient environment, with negligible amount of point defects. Many of its properties in the monolayer form is awaiting to be discovered by researchers. This product comes in crystalline powder form which means that individual crystals measure from 10s microns down to ~100 nm in lateral sizes in layered form. This product is highly crystallized; Amorphous products have been filtered and separated by spin-filtration, mass-separation, and agitation processes to bring you 99.9% crystallized g-C3N4 materials.
Properties of g-C3N4 materials
<td ">Crystal structure<td ">Unit cell parameters
| g-C3N4 | 99.9% crystallized C3N4 layered sheets |
| Material properties | 2.7 eV direct gap, catalytic material |
| Hexagonal phase | |
| Please refer to crystal structure images | |
| Growth method | Step by step polymerization process, followed by photopolymerization |
| Purity | 5.5N (99.9995% pure) |
| Guarantee | Catalytic activity, high crystallization |
Structure of C3N4 materials
Additional Information
Elements: |
C,N |
Element: |
Carbon |
Element: |
Nitrogen |
Formula: |
C3N4 |
Material class: |
Carbon |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Band gap range: |
UV |
Growth method: |
Polymerization |
Doping: |
Undoped |
