Ultrathin GaS on SiO2/Si Ultrathin GaS on c-cut sapphire XRD data taken from GaS - 2Dsemiconductors USA

GaS thin film

$390.00
Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline quality with single domain sizes reaching well above 100microns which is unparalleled to CVD or MOCVD techniques.
 

Properties of monoclinic GaS multilayer thin films 

gas-thin-film-properties.png

XRD data collected from vdW GaS 

 gas-xrd.png

Raman spectrum collected from vdW GaS sheets

gas-raman-spectrum.png

 

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  • Description
    Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline quality with single domain sizes reaching well above 100microns which is unparalleled to CVD or MOCVD techniques.
     

    Properties of monoclinic GaS multilayer thin films 

    gas-thin-film-properties.png

    XRD data collected from vdW GaS 

     gas-xrd.png

    Raman spectrum collected from vdW GaS sheets

    gas-raman-spectrum.png