Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline quality with single domain sizes reaching well above 100microns which is unparalleled to CVD or MOCVD techniques.

 

Properties of monoclinic GaS multilayer thin films 

XRD data collected from vdW GaS 

 

Raman spectrum collected from vdW GaS sheets