Description
Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline quality with single domain sizes reaching well above 100microns which is unparalleled to CVD or MOCVD techniques.
Properties of monoclinic GaS multilayer thin films
| Sample size | 1cm² substrate size and ~0.5mm² active GaS area |
| Material properties | 2.55 eV indirect semiconductor (bulk) |
| Crystal structure | Hexagonal phase |
| Unit cell parameters | a=0.360 nm, b=0.640 nm, c=1.544 nm; α=β=90°, γ=120° |
| Growth method | Atomic layer deposition (ALD) |
| Purity | Better than 99.9999% confirmed |
XRD data collected from vdW GaS
Raman spectrum collected from vdW GaS sheets
Additional Information
Elements: |
Ga,S |
Element: |
Gallium |
Element: |
Sulfur |
Formula: |
GaS |
Material class: |
MX |
Properties: |
Semiconductor |
Properties: |
Luminescent |
Band gap range: |
VIS |
Growth method: |
ALD |
Doping: |
Undoped |
Thin-film type: |
Multilayer |
Substrate: |
SiO2/Si |
Substrate: |
Sapphire |
Substrate: |
Custom |
