CVT grown GaSe layered crystals GaSe crystal XRD taken from GaSe crystals Atomic structure of GaSe crystal Raman spectrum of GaSe crystal PL spectrum of GaSe crystal AFM images from exfoliated GaSe crystals CVT grown GaSe layered crystals GaSe crystal

GaSe crystal

SKU: BLK-GASE-CVT
$580.00
Undoped GaSe crystals growth by Bridgman or chemical vapor transport techniques. Undoped GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments. Our crystals are developed and optimized in the last 15 years to offer highest grade (optical, electronic, and photonic grade) perfectly layered crystals. Please also see our p-type (Cd doping) and n-type (Sn doping) GaSe crystals 
 
p-type GaSe link here
n-type GaSe link here  
 

The physical properties of n-type GaSe crystals

Sample size centimeter or larger in size
Properties

Direct gap semiconductor (2 eV direct gap semiconductor)

crystal structure and exfoliation  Hexagonal phase a=b=0.376 nm c=1.596 nm, a=b=90 g=120
Very easy to exfoliate
Production method Default Bridgman growth technique (Undoped)
CVT grown GaSe crystals available

 

 

GaSe XRD datasets
gase-xrd.png
 
HRTEM characterization on GaSe crystals
gase-hrtem-characterization-ii.png 
AFM images collected from exfoliated GaSe on SiO2/Si substrates
gase-afm.png
 
Raman spectrum taken on GaSe sheets (532 nm excitation laser)
gase-raman.png
 
Photoluminescence (PL) spectra collected from GaSe crystals 
gase-pl.png
 
 Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 
 
Publications

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
Nanoscale Adv., 2022, 4, 479-490

Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994
 
Full Description
Formula: GaSe
Qty
  • Description

    GaSe crystal

    Undoped GaSe crystals growth by Bridgman or chemical vapor transport techniques. Undoped GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments. Our crystals are developed and optimized in the last 15 years to offer highest grade (optical, electronic, and photonic grade) perfectly layered crystals. Please also see our p-type (Cd doping) and n-type (Sn doping) GaSe crystals 
     
    p-type GaSe link here
    n-type GaSe link here  
     

    The physical properties of n-type GaSe crystals

    Sample size centimeter or larger in size
    Properties

    Direct gap semiconductor (2 eV direct gap semiconductor)

    crystal structure and exfoliation  Hexagonal phase a=b=0.376 nm c=1.596 nm, a=b=90 g=120
    Very easy to exfoliate
    Production method Default Bridgman growth technique (Undoped)
    CVT grown GaSe crystals available

     

     

    GaSe XRD datasets
    gase-xrd.png
     
    HRTEM characterization on GaSe crystals
    gase-hrtem-characterization-ii.png 
    AFM images collected from exfoliated GaSe on SiO2/Si substrates
    gase-afm.png
     
    Raman spectrum taken on GaSe sheets (532 nm excitation laser)
    gase-raman.png
     
    Photoluminescence (PL) spectra collected from GaSe crystals 
    gase-pl.png
     
     Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 
     
    Publications

    A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
    Nanoscale Adv., 2022, 4, 479-490

    Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837
    Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994