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Description
GaSe crystal
We provide the world's largest size commercially available GaSe crystals at the highest quality GaSe and affordable prices. Our crystals exceed competing crystals both in size and quality.
Description
Undoped GaSe crystals growth by Bridgman or chemical vapor transport techniques. Undoped GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments. Our crystals are developed and optimized in the last 15 years to offer highest grade (optical, electronic, and photonic grade) perfectly layered crystals. Please also see our p-type (Cd doping) and n-type (Sn doping) GaSe crystalsp-type GaSe link heren-type GaSe link hereThe physical properties of n-type GaSe crystals
Sample size centimeter or larger in size Properties Direct gap semiconductor (2 eV direct gap semiconductor)
crystal structure and exfoliation Hexagonal phase a=b=0.376 nm c=1.596 nm, a=b=90 g=120
Very easy to exfoliateProduction method Default Bridgman growth technique (Undoped)
CVT grown GaSe crystals availableGaSe XRD datasetsHRTEM characterization on GaSe crystalsAFM images collected from exfoliated GaSe on SiO2/Si substratesRaman spectrum taken on GaSe sheets (532 nm excitation laser)Photoluminescence (PL) spectra collected from GaSe crystalsGrowth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.PublicationsA GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
Nanoscale Adv., 2022, 4, 479-490Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994