GaSe thin film on SiO2/Si GaSe thin film on c-cut sapphire Atomic structure of GaSe crystal Raman spectrum of GaSe crystal GaSe thin films PL spectrum of GaSe crystal GaSe thin film on c-cut sapphire

GaSe thin films

$390.00
Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaSe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaSe films come with guaranteed PL, Raman, and semiconducting response
 
Properties of GaSe thin films - 2Dsemiconductors USA
gase-thin-film-properties-2.png 
 
GaSe XRD datasets
gase-xrd.png
 
 
 Raman spectrum taken on GaSe sheets (532 nm excitation laser)
gase-raman.png
 
 
Full Description
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  • Description
    Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaSe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaSe films come with guaranteed PL, Raman, and semiconducting response
     
    Properties of GaSe thin films - 2Dsemiconductors USA
    gase-thin-film-properties-2.png 
     
    GaSe XRD datasets
    gase-xrd.png
     
     
     Raman spectrum taken on GaSe sheets (532 nm excitation laser)
    gase-raman.png