GaSTe crystals crystallize in hexagonal phase and exhibit 1.5 eV band gap in bulk and physical properties of GaSTe crystals as well as monolayers remain entirely unknown in the literature. Existing GaSTe crystals are first in the literature as well as commercial market. These GaSTe (Gallium sulfide telluride) crystals measure up to 1 cm in size and have been developed at our facilities through chemical vapor transport (CVT) technique at 99.995% purity.
Properties of monoclinic GaSTe vdW crystals
Sample size ~6mm-10mm in size Electrical properties Semiconductor (1.5eV) Crystal structure Hexagonal Phase Growth method Chemical vapor transport Characterization methods Raman, photoluminescence, TEM, EDS