GaTe thin film on SiO2/Si GaTe thin film on sapphire XRD data collected from GaTe Properties of GaTe

GaTe thin films

$390.00
Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaTe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaTe films come with guaranteed PL, Raman, and semiconducting response
 
Properties of GaTe thin films - 2Dsemiconductors USA
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GaTe XRD datasets
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 Photoluminescence spectrum taken on GaTe sheets 
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Full Description
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  • Description
    Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaTe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaTe films come with guaranteed PL, Raman, and semiconducting response
     
    Properties of GaTe thin films - 2Dsemiconductors USA
    gate-thin-film-properties.png
     
    GaTe XRD datasets
    gate-xrd.png
     
     
     Photoluminescence spectrum taken on GaTe sheets 
    gate-pl.png