GeSe Germanium selenide crystals measuring larger than 1 cm - 2Dsemiconductors USA GeSe Germanium selenide crystals measuring larger than 1 cm - 2Dsemiconductors USA XRD data taken from GeSe crystals Raman spectrum of GeSe crystals Raman spectrum of GeSe crystals Germanium Selenide (GeSe)

Germanium Selenide (GeSe)

SKU: BLK-GeSe
$570.00

Germanium selenide (GeSe) is a 2D layered semiconductor wherein each individual GeSe layers are bonded through weak van der Waals (vdW) interactions. Our single crystal GeSe crystals come with guaranteed optical, electronic, and structural anisotropy. GeSe crystals are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSeGeTeGeAs, GeP, and Ge-based solutions.

Monolayer GeSe solutions are also available here

GeSe Characteristics

Sample size Many 4-5 mm sized crystals reaching 0.5 to 1 grams. If your research needs larger amounts please reach us
Material properties High mobility IR semiconductor
Crystal structure Orthorhombic phase
Degree of exfoliation medium hard to exfoliate
Production method Flux zone growth (6N pure) [CVT optional at 5.6N pure]
Other characteristics
  • No transport agents 
  • Low defect concentration
  • High carrier mobility

Growth method matters

What's the difference between Flux zone and CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

Raman spectrum collected from GeSe vdW crystals using 532 nm excitation laser 

gese-ii.png

XRD Data taken from GeSe vdW Crystals

gese-xrd.png

 

References

Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
Phys. Rev. Lett. 125, 145301 (2020)

Full Description
Formula: GeSe
Qty
  • Description

    Germanium Selenide (GeSe)

    Germanium selenide (GeSe) is a 2D layered semiconductor wherein each individual GeSe layers are bonded through weak van der Waals (vdW) interactions. Our single crystal GeSe crystals come with guaranteed optical, electronic, and structural anisotropy. GeSe crystals are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSeGeTeGeAs, GeP, and Ge-based solutions.

    Monolayer GeSe solutions are also available here

    GeSe Characteristics

    Sample size Many 4-5 mm sized crystals reaching 0.5 to 1 grams. If your research needs larger amounts please reach us
    Material properties High mobility IR semiconductor
    Crystal structure Orthorhombic phase
    Degree of exfoliation medium hard to exfoliate
    Production method Flux zone growth (6N pure) [CVT optional at 5.6N pure]
    Other characteristics
    • No transport agents 
    • Low defect concentration
    • High carrier mobility

    Growth method matters

    What's the difference between Flux zone and CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

    Raman spectrum collected from GeSe vdW crystals using 532 nm excitation laser 

    gese-ii.png

    XRD Data taken from GeSe vdW Crystals

    gese-xrd.png

     

    References

    Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
    Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
    Phys. Rev. Lett. 125, 145301 (2020)