HfS2 solution Left - HfS2 solution in ethanol
Right - Ethanol reference solution XRD of HfS2 crystals HfS2 characteristics Raman spectrum of HfS2 crystals

HfS2 solution

$380.00

This product contains HfS2 sheets in isopropanol solution. Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. HfS2 crystals has been synthesized synthetically at 99.9999% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by ultrasonic treatment. Since the starting material (synthetic HfS2 crystals) is highly crystalline, ultrasonic treatment to delaminate HfS2 layers yields highly crystalline HfS2 mono- and few-layers suspended in isopropanol solution. The crystallinity of HfS2 nanomaterial has been confirmed through electron energy dispersive spectroscopy (EDAX), Raman spectroscopy (FWHM<5 cm-1), and scanning electron microscopy (SEM) measurements. Lateral sizes of HfS2 flakes deposited onto different substrates range from ~35nm - ~8 um while thickness range from 1L to thicker sheets.

Solution type: By default 2Dsemiconductors USA will provide HfS2 sheets suspended in isopropanol owing to good dispersion, stability, and high performance. However, if your research requires other solvents, please contact us for more details and schedule for the product delivery.

Solution concentration:  To reduce shipping costs, easy customs agreement / border check-in processes, we ship supersaturated 2D solutions (~100 mg/L depending on the type of 2D layers). However, supersaturated solutions can be diluted to produce ~250-500mL of solution to deposit 2D layers onto desired substrates through simple and cost-effective spin-casting process.

XRD data collected from HfS2 

hfs2-xrd.png

Raman spectrum collected from HfS2

hfs2-raman.png

 

Full Description
Qty
  • Description

    This product contains HfS2 sheets in isopropanol solution. Hafnium disulfide (HfS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. HfS2 crystals has been synthesized synthetically at 99.9999% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by ultrasonic treatment. Since the starting material (synthetic HfS2 crystals) is highly crystalline, ultrasonic treatment to delaminate HfS2 layers yields highly crystalline HfS2 mono- and few-layers suspended in isopropanol solution. The crystallinity of HfS2 nanomaterial has been confirmed through electron energy dispersive spectroscopy (EDAX), Raman spectroscopy (FWHM<5 cm-1), and scanning electron microscopy (SEM) measurements. Lateral sizes of HfS2 flakes deposited onto different substrates range from ~35nm - ~8 um while thickness range from 1L to thicker sheets.

    Solution type: By default 2Dsemiconductors USA will provide HfS2 sheets suspended in isopropanol owing to good dispersion, stability, and high performance. However, if your research requires other solvents, please contact us for more details and schedule for the product delivery.

    Solution concentration:  To reduce shipping costs, easy customs agreement / border check-in processes, we ship supersaturated 2D solutions (~100 mg/L depending on the type of 2D layers). However, supersaturated solutions can be diluted to produce ~250-500mL of solution to deposit 2D layers onto desired substrates through simple and cost-effective spin-casting process.

    XRD data collected from HfS2 

    hfs2-xrd.png

    Raman spectrum collected from HfS2

    hfs2-raman.png