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Large size Indium selenide crystals Indium Selenide (InSe) Large size Indium selenide crystals Large size Indium selenide crystals

Indium Selenide (InSe)

SKU: BLK-InSe-CVT
$590.00

See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023)

We provide the world's largest size commercially available InSe crystals at the highest quality InSe and affordable prices. Our crystals exceed competing crystals both in size and quality.

Description

Our single crystal gamma phase InSe crystals come with guaranteed optical, electronic, and structural quality. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth abd ii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples around centimeters in size. Bridgman method offers superior crystallinity (recommended method). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 
 
The properties of InSe crystals 
Sample size World's largest size crystals: Larger than cm size CVT grown crystals; 7-10mm size Bridgman grown
Material properties 1.26 eV direct gap 2D semiconductor
Crystal structure Gamma phase InSe crystal
Degree of exfoliation Easy to exfoliate
Production method

Bridgman growth (recommended); 7N (99.99999%) purity, high crystallinity)

Chemical vapor transport (CVT) - Optional' 5.5N (99.9995%) purity (uses I2 transport agent)  
Other characteristics
  • single crystalline
  • High environmental stability
  • Ready for exfoliation
  • No hidden phases (see XRD and Raman)
  • No amorphization

 XRD dataset collected from bulk InSe crystals

inse-xrd.png
Raman spectrum collected from bulk InSe crystals
inse-raman.png

Photoluminescence spectrum collected from bulk InSe crystals
inse-photoluminescence-spectrum.png
Publications from this product

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices
Nature Nanotechnology volume 16, pages882–887 (2021)

"Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain" ACS Appl. Mater. Interfaces, 2018, 10 (4), pp 3994–4000
Full Description
Formula: InSe
Qty
  • Description

    Indium Selenide (InSe)

    See ballistic world record InSe FET mobility accomplished by our InSe crystals; "Ballistic two-dimensional InSe transistors" Nature, 616, 470–475 (2023)

    We provide the world's largest size commercially available InSe crystals at the highest quality InSe and affordable prices. Our crystals exceed competing crystals both in size and quality.

    Description

    Our single crystal gamma phase InSe crystals come with guaranteed optical, electronic, and structural quality. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth abd ii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples around centimeters in size. Bridgman method offers superior crystallinity (recommended method). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 
     
    The properties of InSe crystals 
    Sample size World's largest size crystals: Larger than cm size CVT grown crystals; 7-10mm size Bridgman grown
    Material properties 1.26 eV direct gap 2D semiconductor
    Crystal structure Gamma phase InSe crystal
    Degree of exfoliation Easy to exfoliate
    Production method

    Bridgman growth (recommended); 7N (99.99999%) purity, high crystallinity)

    Chemical vapor transport (CVT) - Optional' 5.5N (99.9995%) purity (uses I2 transport agent)  
    Other characteristics
    • single crystalline
    • High environmental stability
    • Ready for exfoliation
    • No hidden phases (see XRD and Raman)
    • No amorphization

     XRD dataset collected from bulk InSe crystals

    inse-xrd.png
    Raman spectrum collected from bulk InSe crystals
    inse-raman.png

    Photoluminescence spectrum collected from bulk InSe crystals
    inse-photoluminescence-spectrum.png
    Publications from this product

    Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices
    Nature Nanotechnology volume 16, pages882–887 (2021)

    "Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain" ACS Appl. Mater. Interfaces, 2018, 10 (4), pp 3994–4000

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