WS2 - MBE on c-cut Sapphire

SKU:
MBE-WS2
Condition:
New
  • MBE WS2
  • Comparison between MBE, CVD, and MOCVD
  • MBE WS2
  • MBE WS2
  • PL of MBE WS2
  • Raman spectrum of MBE WS2
  • MBE WS2
  • MBE WS2
$750.00
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Description

World's first molecular beam epitaxy (MBE) grown WS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of WS2 monolayers take place in a MBE chamber at a base pressure of 8E-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick WS2 isolated triangles on double-side polished c-cut sapphire. Currently, MBE WS2 is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.   

Comparison between MBE, CVD, and MOCVD

comparison-mbe-cvd-mocvd-ii.png

TEM comparison between MBE, CVD, and MOCVD

mbemos2sapp.png

 Optical images collected from MBE WS2

 mbe-ws2-optical-images.png

MBE WS2 suspended on TEM grid

mbe-ws2-tem-grid.png

 PL spectrum collected from MBE WS2

mbe-ws2-pl-spectrum.png

 Raman spectrum collected from MBE WS2

mbe-ws2-raman-spectrum.png

 

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Additional Information

Elements:
W,S
Element:
Tungsten
Element:
Sulfur
Formula:
WS2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Growth method:
MBE
Doping:
Undoped
Thin-film type:
Monolayer
Thin-film type:
Triangles
Substrate:
Sapphire
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