MBE grown MoS2 monolayers MBE grown MoS2 monolayers MBE grown MoS2 monolayers MBE grown MoS2 monolayers MBE grown MoS2 monolayers Comparison between MBE, CVD, and MOCVD MBE MoS2 Raman spectrum MBE MoS2 PL spectrum

2D MBE MoS2

$670.00

World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoS2 monolayers take place in a MBE chamber at a base pressure of 8E-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoS2 isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoS2 is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.  

Comparison between MBE, CVD, and MOCVD

comparison-mbe-cvd-mocvd-ii.png

TEM comparison between MBE, CVD, and MOCVD

mbemos2sapp.png

 Optical images collected from MBE MoS2

 mbemos2optical-images.png

MBE MoS2 suspended on TEM grid

mbemos2-on-tem-grid.png

 PL spectrum collected from MBE MoS2

mbe-mos2-pl.png

 Raman spectrum collected from MBE MoS2

mbe-mos2-raman.png

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Double side polished c-cut sapphire
Coverage Isolated triangles but may reach some continuity
Electrical properties Direct gap excitonic semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.33 nm, c = 1.292 nm, α = β = 90°, γ = 120°
Production method Molecular beam epitaxy (MBE)
Characterization methods Raman, photoluminescence, TEM, XRD, and others

Full Description
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  • Description

    World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoS2 monolayers take place in a MBE chamber at a base pressure of 8E-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoS2 isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoS2 is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.  

    Comparison between MBE, CVD, and MOCVD

    comparison-mbe-cvd-mocvd-ii.png

    TEM comparison between MBE, CVD, and MOCVD

    mbemos2sapp.png

     Optical images collected from MBE MoS2

     mbemos2optical-images.png

    MBE MoS2 suspended on TEM grid

    mbemos2-on-tem-grid.png

     PL spectrum collected from MBE MoS2

    mbe-mos2-pl.png

     Raman spectrum collected from MBE MoS2

    mbe-mos2-raman.png

    Sample Properties

    Sample size 1cm x 1cm square shaped
    Substrate type Double side polished c-cut sapphire
    Coverage Isolated triangles but may reach some continuity
    Electrical properties Direct gap excitonic semiconductor
    Crystal structure Hexagonal Phase
    Unit cell parameters a = b = 0.33 nm, c = 1.292 nm, α = β = 90°, γ = 120°
    Production method Molecular beam epitaxy (MBE)
    Characterization methods Raman, photoluminescence, TEM, XRD, and others