Large size metallic 1T' phase MoTe2 crystals Large size metallic 1T' phase MoTe2 crystals Raman spectrum from 1T'-MoTe2 metallic crystals - 2Dsemiconductors USA XRD data on 1T'-MoTe2 metallic crystals - 2Dsemiconductors USA

Metallic MoTe2 (1T' phase)

$590.00

1T'=phase MoTe2 crystals are 2D metals, are known to be gapless semimetal in few-layer form, and potentially topological superconductors. 1T' metallic phase of MoTe2 crystals contain layers that are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our large size 1T'-MoTe2 vdW crystals are treated as gold standards in 2D materials field. They come with guaranteed environmental stability, negligible amount of point defects, highly metallic response, and high carrier mobility. Our MoTe2 crystals are synthesized two different methods (flux zone and chemical vapor transport). While flux zone provides extremely clean MoTe2 crystals, CVT method often introduces halide contaminants. For comparison between these tow methods, please see the information below. 

Characteristics of 1T'-MoTe2 crystals from 2Dsemiconductors USA

mote2-1t-phase-properties.png

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

 XRD data collected from 1T'-MoTe2 crystals
mote2-1t-phase-xrd.png
 
Raman spectrum collected from 1T'-phase metallic MoTe2 crystals
mote2-1t-phase-raman.png
 
Partial List of Publications Using This Product

Y. Li et. al. "Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity"
Nature Nanotechnology volume 12, pages 987–992 (2017)

Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers, Phys. Rev. Lett. 117, 187401 (2016)

Tony Heinz Team "Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals" Nano Letters 2014, 14, 6231−6236

Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2; Q. J. Song, Q. H. Tan, X. Zhang, J. B. Wu, B. W. Sheng, Y. Wan, X. Q. Wang, L. Dai, and P. H. Tan; Phys. Rev. B 93, 115409 (2016)

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2; Ignacio Gutiérrez Lezama et. al. Nano Letters 2015, 15 (4), pp 2336–2342 DOI: 10.1021/nl5045007

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. Heinz; Phys. Rev. B 90, 205422 (2014)

M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929

H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)

Full Description
Formula: MoTe2
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  • Description

    1T'=phase MoTe2 crystals are 2D metals, are known to be gapless semimetal in few-layer form, and potentially topological superconductors. 1T' metallic phase of MoTe2 crystals contain layers that are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our large size 1T'-MoTe2 vdW crystals are treated as gold standards in 2D materials field. They come with guaranteed environmental stability, negligible amount of point defects, highly metallic response, and high carrier mobility. Our MoTe2 crystals are synthesized two different methods (flux zone and chemical vapor transport). While flux zone provides extremely clean MoTe2 crystals, CVT method often introduces halide contaminants. For comparison between these tow methods, please see the information below. 

    Characteristics of 1T'-MoTe2 crystals from 2Dsemiconductors USA

    mote2-1t-phase-properties.png

    Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

     XRD data collected from 1T'-MoTe2 crystals
    mote2-1t-phase-xrd.png
     
    Raman spectrum collected from 1T'-phase metallic MoTe2 crystals
    mote2-1t-phase-raman.png
     
    Partial List of Publications Using This Product

    Y. Li et. al. "Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity"
    Nature Nanotechnology volume 12, pages 987–992 (2017)

    Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers, Phys. Rev. Lett. 117, 187401 (2016)

    Tony Heinz Team "Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals" Nano Letters 2014, 14, 6231−6236

    Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2; Q. J. Song, Q. H. Tan, X. Zhang, J. B. Wu, B. W. Sheng, Y. Wan, X. Q. Wang, L. Dai, and P. H. Tan; Phys. Rev. B 93, 115409 (2016)

    Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2; Ignacio Gutiérrez Lezama et. al. Nano Letters 2015, 15 (4), pp 2336–2342 DOI: 10.1021/nl5045007

    Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. Heinz; Phys. Rev. B 90, 205422 (2014)

    M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929

    H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)