Molybdenum Tungsten Ditelluride (MoWTe2)
The first MoWTe2 ternary alloy. Large single crystal defect free molybdenum tungsten ditelluride (MoxW(1-x)Te2) crystals have been developed in our facilities and they have x=0.3,0.5, and 0.7 stoichiometric ratios. As they are semiconductor grade (99.9995% purity and perfect stoichiometry), you do not need to worry about amorphous phase, defects, or contamination. As the crystal size is large, they are ideal for exfoliating large monolayers. Single crystal MoWTe2 are very easy to exfoliate and the monolayer yield is high. Our crystals are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below) and their composition values were determined by XPS, SAED, and EDS measurements.. These crystals all possess extremely narrow PL bandwidths, display clean PL spectra, high carrier mobility, extremely clean and sharp XRD peaks, and negligible amount of defects (see published results as well as CVT vs. Flux based methods below ). These crystals come with guaranteed alloying and valleytronic response, sharp PL, and good electronic response.
Important advantages of our crystals
1. Crystals come fully characterized using macro, micro, and nanoscale measurements (see below)
2. Thanks to our improved flux zone growth method, our crystals are homogeneously alloyed which means across the specimen you will only find one particular x composition.
3. No separation: Phase separation is commonly observed in 2D TMDCs alloys when cooling profiles are not controlled carefully. Our R&D team has worked over five (5) years to solely solve this problem.
During order please specify the desired composition ratio.
Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.