Our n-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to n-type using Sn atoms at around 1E18cm-3 range. N-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments.  

 

The physical properties of n-type GaSe crystals

Sample size	Around 5mm in size
Properties	Direct gap semiconductor
Exfoliation characteristics	Very easy
Production method	Bridgman growth technique (Sn dopant)

 

 

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
Nanoscale Adv., 2022, 4, 479-490

Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994