n-type GaSe crystals grown by Bridgman and doped with Sn atoms at ~1E18cm-3 Atomic structure of GaSe crystal

n-type GaSe

SKU: BLK-n-type-GaSe
$640.00
Our n-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to n-type using Sn atoms at around 1E18cm-3 range. N-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments.  
 

The physical properties of n-type GaSe crystals

Sample size Around 5mm in size
Properties

Direct gap semiconductor

Exfoliation characteristics Very easy
Production method Bridgman growth technique (Sn dopant)

 
GaSe XRD datasets
gase-xrd.png
 
Publications

A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
Nanoscale Adv., 2022, 4, 479-490

Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994
 
Full Description
Formula: GaSe
Qty
  • Description

    n-type GaSe

    Our n-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to n-type using Sn atoms at around 1E18cm-3 range. N-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments.  
     

    The physical properties of n-type GaSe crystals

    Sample size Around 5mm in size
    Properties

    Direct gap semiconductor

    Exfoliation characteristics Very easy
    Production method Bridgman growth technique (Sn dopant)

     
    GaSe XRD datasets
    gase-xrd.png
     
    Publications

    A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors
    Nanoscale Adv., 2022, 4, 479-490

    Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets; Link: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.201409837
    Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors; ACS Nano, 2012, 6 (7), pp 5988–5994