n-type MoS2 crystals

n-type MoS2 crystals

SKU: BLK-MoS2-N
$510.00

Years of growth optimization lead to our flawless n-type MoS2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field. Our n-type MoS2 crystals are doped with Re or Au atoms at ~1E17-1E18 cm-3 range. However, if your research  requires other types or concentration of dopants please contact us. Intentionally doped MoS2 crystals from 2Dsemiconductors are known for its superior valleytronic performance, perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility. Thousands of scientific articles have cited us and used these crystals for scientific accuracy and clean signals. Please also see our n- and p-type MoS2 crystals doped with Au, Re, Nb, or other transition metal atoms. Please note that doping into TMDCs greatly reduce the crystallization time (growth speeds), thus electronically doped TMDCs measure smaller than undoped (intrinsic) TMDCs.

List of publications out of this product listed below this page.

Our company essentially provides doping for almost any layered materials including MoS2 crystals. N-type MoS2 samples are doped by Re atoms at ~1E17cm-3 levels. Crystallinity, electronic, and optical quality have been perfected through our prefected material synthesis techniques. Purity is at 6N (99.9999%). 

Summary of available doped layered materials

MoS2; n-type and p-type available (via Nb, Co, Ni, Au, or Re dopants)

WS2; n-type and p-type available (via Au or Nb doping)

WSe2; n-type and p-type available (via Re or Nb doping)

MoSe2 ; n-type and p-type available (via Re or Nb doping)

Black phosphorus; n-type or p-type doping available (via Br or As doping)

ReX2 (X=S, Se); n-type or p-type doping available (via Mo or Nb doping)

Bi2X3 (X=S,Se, and Te); n-type or p-type doping available (via Ca doping)

Photoluminescence spectrum from monolayer MoS2 sheets exfoliated from synthetic MoS2 crystals

mos2-photoluminescence.png

Raman spectrum from synthetic MoS2 crystals

mos2-raman.png

XRD data collected from synthetic MoS2 crystals

mos2-xrd.png

Publications from this product

Summary: Publications from Cornell, Washington, MIT, Berkeley, Stanford, and Princeton teams at top journals like Nature, Nature Materials, Nature Communications, Nano Letters, and Advanced Materials

Weigao Xu et al., "Correlated fluorescence blinking in two-dimensional semiconductor heterostructures", Nature 541, 62-67 (2017), link to article:
http://www.nature.com/nature/journal/v541/n7635/full/nature20601.html 

Manish Chhowalla team "Phase-engineered low-resistance contacts for ultrathin MoS2 transistors" Nature Materials DOI: 10.1038/NMAT4080

X. Chen "Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures" Nature Communications 6, Article number: 6088 (2015) doi:10.1038/ncomms7088

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. HeinzPhys. Rev. B 90, 205422 (2014)

H. Wang et.al. "Ultrafast response of monolayer molybdenum disulfide photodetector" Nature Communications 6, Article number: 8831 (2015)

Y. Jin "A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2" Advanced Materials 27, 5534–5540 (2015)

Tongay et. al. "Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons" Scientific Reports 3, Article number: 2657 (2013)

X Li et al. "Determining layer number of twodimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates" Nanotechnology 27 (2016) 145704

Tongay et.al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2; Nano Letters, 2012, 12 (11), pp 5576–5580

Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929

H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)

 

 

 

 

 

Full Description
Formula: MoS2
Qty
  • Description

    n-type MoS2 crystals

    Years of growth optimization lead to our flawless n-type MoS2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field. Our n-type MoS2 crystals are doped with Re or Au atoms at ~1E17-1E18 cm-3 range. However, if your research  requires other types or concentration of dopants please contact us. Intentionally doped MoS2 crystals from 2Dsemiconductors are known for its superior valleytronic performance, perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility. Thousands of scientific articles have cited us and used these crystals for scientific accuracy and clean signals. Please also see our n- and p-type MoS2 crystals doped with Au, Re, Nb, or other transition metal atoms. Please note that doping into TMDCs greatly reduce the crystallization time (growth speeds), thus electronically doped TMDCs measure smaller than undoped (intrinsic) TMDCs.

    List of publications out of this product listed below this page.

    Our company essentially provides doping for almost any layered materials including MoS2 crystals. N-type MoS2 samples are doped by Re atoms at ~1E17cm-3 levels. Crystallinity, electronic, and optical quality have been perfected through our prefected material synthesis techniques. Purity is at 6N (99.9999%). 

    Summary of available doped layered materials

    MoS2; n-type and p-type available (via Nb, Co, Ni, Au, or Re dopants)

    WS2; n-type and p-type available (via Au or Nb doping)

    WSe2; n-type and p-type available (via Re or Nb doping)

    MoSe2 ; n-type and p-type available (via Re or Nb doping)

    Black phosphorus; n-type or p-type doping available (via Br or As doping)

    ReX2 (X=S, Se); n-type or p-type doping available (via Mo or Nb doping)

    Bi2X3 (X=S,Se, and Te); n-type or p-type doping available (via Ca doping)

    Photoluminescence spectrum from monolayer MoS2 sheets exfoliated from synthetic MoS2 crystals

    mos2-photoluminescence.png

    Raman spectrum from synthetic MoS2 crystals

    mos2-raman.png

    XRD data collected from synthetic MoS2 crystals

    mos2-xrd.png

    Publications from this product

    Summary: Publications from Cornell, Washington, MIT, Berkeley, Stanford, and Princeton teams at top journals like Nature, Nature Materials, Nature Communications, Nano Letters, and Advanced Materials

    Weigao Xu et al., "Correlated fluorescence blinking in two-dimensional semiconductor heterostructures", Nature 541, 62-67 (2017), link to article:
    http://www.nature.com/nature/journal/v541/n7635/full/nature20601.html 

    Manish Chhowalla team "Phase-engineered low-resistance contacts for ultrathin MoS2 transistors" Nature Materials DOI: 10.1038/NMAT4080

    X. Chen "Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures" Nature Communications 6, Article number: 6088 (2015) doi:10.1038/ncomms7088

    Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. HeinzPhys. Rev. B 90, 205422 (2014)

    H. Wang et.al. "Ultrafast response of monolayer molybdenum disulfide photodetector" Nature Communications 6, Article number: 8831 (2015)

    Y. Jin "A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2" Advanced Materials 27, 5534–5540 (2015)

    Tongay et. al. "Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons" Scientific Reports 3, Article number: 2657 (2013)

    X Li et al. "Determining layer number of twodimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates" Nanotechnology 27 (2016) 145704

    Tongay et.al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2; Nano Letters, 2012, 12 (11), pp 5576–5580

    Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

    D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

    M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929

    H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)