NbSe2 crystals XRD data from NbSe2 crystals NbSe2 crystals Raman spectrum of NbSe2 crystals

NbSe2 crystals

SKU: BLK-NbSe2
$590.00

2H-phase niobium diselenide 2H-NbSe2) is a superconducting vdW crystal with charge density wave (CDW) and Weyl semimetal properties. It has a superconducting critical temperature of ~7.8K and charge density wave behavior at ~34K. Owing to extremely low point defect density well below (1E10 cm-2), our NbSe2 crystals are the only commercially available crystals with guaranteed superconducting and CDW behavior. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling. NbSe2 displays metallic and superconducting behavior. Undergoes superconducting transition at low temperatures, exhibits CDW behavior. Unlike other sources, our NbSe2 crystals are grown by defect and impurity free flux zone technique (see the comparison between chemical vapor transport [CVT] below). Clean and defect free nature enabled researchers to observe clean superconductivity, phase transitions, and perform quantum transport measurements with confidence in the crystal. If your research needs atomically flat NbSe2 samples for scanning tunneling microscopy (STM) measurements please contact us.

Properties of NbSe2 crystals by 2Dsemiconductors USA

nbse2-properties-i.png

 Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.  
 
XRD data collected from high quality NbSe2 crystals
 
 nbse2-xrd.png
Raman spectrum collected from NbSe2 single crystals showing defect free and highly crystalline nature of NbSe2
nbse2-raman.png
 
 
Full Description
Formula: NbSe2
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  • Description

    NbSe2 crystals

    2H-phase niobium diselenide 2H-NbSe2) is a superconducting vdW crystal with charge density wave (CDW) and Weyl semimetal properties. It has a superconducting critical temperature of ~7.8K and charge density wave behavior at ~34K. Owing to extremely low point defect density well below (1E10 cm-2), our NbSe2 crystals are the only commercially available crystals with guaranteed superconducting and CDW behavior. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling. NbSe2 displays metallic and superconducting behavior. Undergoes superconducting transition at low temperatures, exhibits CDW behavior. Unlike other sources, our NbSe2 crystals are grown by defect and impurity free flux zone technique (see the comparison between chemical vapor transport [CVT] below). Clean and defect free nature enabled researchers to observe clean superconductivity, phase transitions, and perform quantum transport measurements with confidence in the crystal. If your research needs atomically flat NbSe2 samples for scanning tunneling microscopy (STM) measurements please contact us.

    Properties of NbSe2 crystals by 2Dsemiconductors USA

    nbse2-properties-i.png

     Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.  
     
    XRD data collected from high quality NbSe2 crystals
     
     nbse2-xrd.png
    Raman spectrum collected from NbSe2 single crystals showing defect free and highly crystalline nature of NbSe2
    nbse2-raman.png