p-type electronically doped Bismuth Selenide (Bi₂Se₃) Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state. Bi2Se3 crystals are topological insulator material in which its bulk is insulating while its surface states are conducting. The surface states of topological insulator are robust against any external perturbation because such states are protected by time-reversal symmetry. Similar to transition metal dichalgonides and graphite, Bi₂Se₃ is also layered material with weak interlayer coupling. They measure ~1cm in size which is the largest size offered in the field. Our crystals exhibit world only 99.9999% purity levels and defect density concentrations as low as 1E9cm-2. Our Bi2Se3 crystals are ideal for electronic, topological insulator, and other solid state sciences research. Examples include scanning tunneling (STM), transmission electron microscopy (TEM), and other spectroscopic studies. Overall, Bi2Se3 displays very sharp and clear Raman modes with FWHM less than 4cm-1, sharp XRD pattern free of minority phases.
Characteristics of Bi2Se3 crystals
XRD data collected from Bi2Se3 crystals - 2Dsemiconductors USA
Raman spectrum of Bi2Se3 crystals
Example publication from this product
L. A. Walsh et. al. "Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3" ACS Nano, 12 (6), pp 6310–6318 (2018)