Rhenium Diselenide (ReSe2) Rhenium Diselenide (ReSe2) TEM measurements on exfoliated ReSe2 monolayers from our crystals demonstrate strong crystalline anisotropy (2Dsemiconductors Inc.) Rhenium Diselenide (ReSe2) Polar Raman Spectroscopy Displaying the crystalline anisotropy of ReSe2 monolayers exfoliated from ReSe2 crystals (2Dsemiconductors Inc.) Rhenium Diselenide (ReSe2) Rhenium Diselenide (ReSe2) Rhenium Diselenide (ReSe2) Rhenium Diselenide (ReSe2)

Rhenium Diselenide (ReSe2)

SKU: BLK-ReSe2
$580.00

Single crystal ReSe₂ (Rhenium diselenide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 8 years of growth optimization to ensure anisotropic properties. Our ReSe2 crystals display impressive structural anisotropy from bulk down to monolayers as evidenced by TEM and angle resolved Raman spectroscopy measurements (see XRD, TEM, Raman, PL, and other figures below). Our ReSe2 crystals that guarantees crystalline, optical, and electronic anisotropy at large scales. Crystals are rather large in size, perfectly layered, and ready for exfoliation. Our R&D team also provides you with transfer technique to boost your monolayer yield rate up to 95%. If your research needs doped ReSe2 crystals, we can introduce Mo, Au, Nb, and other dopants. 

Please also see our CVD ReS2 monolayers. Go to CVD ReSe2 website [click here]

Typical characteristics of ReSe2 crystals from 2Dsemiconductors

rese2-properties-iii.png

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

XRD data collected from ReSe2 crystals

rese2-xrd-ii.png

Raman spectrum collected from ReSe2 monolayers

rese2-raman-spectrum-ii.png

PL spectrum collected from ReSe2 on SiO2/Si substrates

rese2-pl-spectrum.png

SIMS purity datasets collected from ReSe2 crystals

rese2-sims-purity.png

 HRTEM images collected from ReX2 crystals

 rese2-hrtem.png

 
 
Partial List of Publications Using This Product

D. Wolverson et,al. "Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations," Nano Letters 2016, 16, 1381−1386

Ignacio Gutiérrez-Lezama et. al. "Electroluminescence from indirect band gap semiconductor ReS2" 2D Materials, Volume 3, Number 4

Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

Q. Cui et. al. "Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2" ACS Nano 10.1021/acsnano.5b01111 (2015)

X-F. Qiao et.al. "Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2" Nanoscale, 2016, 8, 8324 (2016)

D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

E. Lorchat et.al. "Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2" ACS Nano, 2016, 10 (2), pp 2752–2760

 
Partial List of Publications Using This Product

Ignacio Gutiérrez-Lezama et. al. "Electroluminescence from indirect band gap semiconductor ReS2" 2D Materials, Volume 3, Number 4

D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

E. Lorchat et.al. "Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2" ACS Nano, 2016, 10 (2), pp 2752–2760

Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2; Nano Lett., 2017, 17 (5), pp 3202–3207

 
 
Full Description
Formula: ReSe2
Qty
  • Description

    Rhenium Diselenide (ReSe2)

    Single crystal ReSe₂ (Rhenium diselenide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 8 years of growth optimization to ensure anisotropic properties. Our ReSe2 crystals display impressive structural anisotropy from bulk down to monolayers as evidenced by TEM and angle resolved Raman spectroscopy measurements (see XRD, TEM, Raman, PL, and other figures below). Our ReSe2 crystals that guarantees crystalline, optical, and electronic anisotropy at large scales. Crystals are rather large in size, perfectly layered, and ready for exfoliation. Our R&D team also provides you with transfer technique to boost your monolayer yield rate up to 95%. If your research needs doped ReSe2 crystals, we can introduce Mo, Au, Nb, and other dopants. 

    Please also see our CVD ReS2 monolayers. Go to CVD ReSe2 website [click here]

    Typical characteristics of ReSe2 crystals from 2Dsemiconductors

    rese2-properties-iii.png

    Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

    XRD data collected from ReSe2 crystals

    rese2-xrd-ii.png

    Raman spectrum collected from ReSe2 monolayers

    rese2-raman-spectrum-ii.png

    PL spectrum collected from ReSe2 on SiO2/Si substrates

    rese2-pl-spectrum.png

    SIMS purity datasets collected from ReSe2 crystals

    rese2-sims-purity.png

     HRTEM images collected from ReX2 crystals

     rese2-hrtem.png

     
     
    Partial List of Publications Using This Product

    D. Wolverson et,al. "Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations," Nano Letters 2016, 16, 1381−1386

    Ignacio Gutiérrez-Lezama et. al. "Electroluminescence from indirect band gap semiconductor ReS2" 2D Materials, Volume 3, Number 4

    Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

    Q. Cui et. al. "Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2" ACS Nano 10.1021/acsnano.5b01111 (2015)

    X-F. Qiao et.al. "Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2" Nanoscale, 2016, 8, 8324 (2016)

    D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

    E. Lorchat et.al. "Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2" ACS Nano, 2016, 10 (2), pp 2752–2760

     
    Partial List of Publications Using This Product

    Ignacio Gutiérrez-Lezama et. al. "Electroluminescence from indirect band gap semiconductor ReS2" 2D Materials, Volume 3, Number 4

    D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

    E. Lorchat et.al. "Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2" ACS Nano, 2016, 10 (2), pp 2752–2760

    Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2; Nano Lett., 2017, 17 (5), pp 3202–3207