Large size ReS2 crystals - 2Dsemiconductors USA Large size ReS2 crystals - 2Dsemiconductors USA XRD ReS2 crystals Raman and angle resolved Raman spectrum of ReS2 crystals HRTEM ReS2 crystals Angle resolved Raman spectroscopy measurements on ReS2 monolayers exfoliated from ReS2 crystals from our company (2Dsemiconductors Inc.) displaying the highly anisotropic nature of our crystals. Crystalline anisotropy of ReS2 exfoliated monolayers from our ReS2 crystals (2Dsemiconductors Inc.) PL spectrum from ReS2 crystals Rhenium Disulfide (ReS2) SIMS from ReS2 crystals

Rhenium Disulfide (ReS2)

SKU: BLK-ReS2
$580.00

Single crystal ReS₂ (Rhenium disulfide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropic properties. Our ReS2 crystals display impressive structural anisotropy from bulk down to monolayers as evidenced by TEM and angle resolved Raman spectroscopy measurements (see XRD, TEM, Raman, PL, and other figures below). Crystals are rather large in size, perfectly layered, and ready for exfoliation. Our R&D team also provides you with transfer technique to boost your monolayer yield rate up to 95%. If your research needs doped ReS2 crystals, we can introduce Mo, Au, Nb, and other dopants. 

To see our CVD ReS2 monolayer products, please go to CVD ReS2 website [click here]

Typical characteristics of ReS2 crystals from 2Dsemiconductors

res2-characteristics.png

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

XRD data collected from ReS2 crystals

res2-xrd-ii.png

Raman spectrum collected from ReS2 monolayers

res2-raman-spectrum-combined.png

PL spectrum collected from ReS2 on SiO2/Si substrates

res2-crystals-pl-spectrum.png

SIMS purity datasets collected from ReS2 crystals

res2-sims-purity.png

 HRTEM images collected from ReS2 crystals

 res2-hrtem.png

 
Please also see our new product 'Full coverage monolayer ReS2 on c-cut sapphire'.
 
Partial List of Publications Using This Product

D. Wolverson et,al. "Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations," Nano Letters 2016, 16, 1381−1386

Ignacio Gutiérrez-Lezama et. al. "Electroluminescence from indirect band gap semiconductor ReS2" 2D Materials, Volume 3, Number 4

Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

Q. Cui et. al. "Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2" ACS Nano 10.1021/acsnano.5b01111 (2015)

X-F. Qiao et.al. "Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2" Nanoscale, 2016, 8, 8324 (2016)

D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

E. Lorchat et.al. "Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2" ACS Nano, 2016, 10 (2), pp 2752–2760

Full Description
Formula: ReS2
Qty
  • Description

    Rhenium Disulfide (ReS2)

    Single crystal ReS₂ (Rhenium disulfide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropic properties. Our ReS2 crystals display impressive structural anisotropy from bulk down to monolayers as evidenced by TEM and angle resolved Raman spectroscopy measurements (see XRD, TEM, Raman, PL, and other figures below). Crystals are rather large in size, perfectly layered, and ready for exfoliation. Our R&D team also provides you with transfer technique to boost your monolayer yield rate up to 95%. If your research needs doped ReS2 crystals, we can introduce Mo, Au, Nb, and other dopants. 

    To see our CVD ReS2 monolayer products, please go to CVD ReS2 website [click here]

    Typical characteristics of ReS2 crystals from 2Dsemiconductors

    res2-characteristics.png

    Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

    XRD data collected from ReS2 crystals

    res2-xrd-ii.png

    Raman spectrum collected from ReS2 monolayers

    res2-raman-spectrum-combined.png

    PL spectrum collected from ReS2 on SiO2/Si substrates

    res2-crystals-pl-spectrum.png

    SIMS purity datasets collected from ReS2 crystals

    res2-sims-purity.png

     HRTEM images collected from ReS2 crystals

     res2-hrtem.png

     
    Please also see our new product 'Full coverage monolayer ReS2 on c-cut sapphire'.
     
    Partial List of Publications Using This Product

    D. Wolverson et,al. "Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations," Nano Letters 2016, 16, 1381−1386

    Ignacio Gutiérrez-Lezama et. al. "Electroluminescence from indirect band gap semiconductor ReS2" 2D Materials, Volume 3, Number 4

    Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

    Q. Cui et. al. "Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2" ACS Nano 10.1021/acsnano.5b01111 (2015)

    X-F. Qiao et.al. "Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2" Nanoscale, 2016, 8, 8324 (2016)

    D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

    E. Lorchat et.al. "Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe2 and ReS2" ACS Nano, 2016, 10 (2), pp 2752–2760