1 cm size high quality SnS tin sulfide crystals by 2Dsemiconductors USA (Bridgman growth) 1 cm size high quality SnS tin sulfide crystals by 2Dsemiconductors USA (Flux zone growth) Easy to exfoliate 1 cm size high quality SnS tin sulfide crystals by 2Dsemiconductors USA
SnS crystal SAED SnS Raman spectrum SnS EDS spectrum SnS crystal properties

SnS crystal

SKU: BLK-SnS-BGM
$590.00

 Tin sulfide (SnS) is a layered monochalcogenide semiconductor crystallizing in orthorhombic phase. The layers of cations are separated only by van der Waals (vdW) forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. Theoretical predictions show that SnS band gap values span from 1.4 eV to 1.9 eV from bulk to monolayer. SnS layers exhibit high in-plane anisotropy and high carrier mobility reaching as high as tens of thousands of cm2V–1s–1 which is superior to that of black phosphorus [1]. Their potential uses include photovoltaics, high electron mobility transistors, and catalytic energy conversion technologies. Our SnS crystal exhibit 99.9999% guaranteed purity, low defect concentration (<1E9cm-2), and high crystallinity. SnS crystals are grown either through flux vapor transport (flux method) or Bridgman technique.

The properties of SnS van der Waals crystals 

Sample size cm size crystals
Material properties Indirect gap vdW semiconductor
Crystal structure Orthorhombic phase 
Degree of exfoliation Very easy to exfoliate
Production method Flux zone (no halide contamination) larger ~10 mm or larger size or Bridgman growth (higher grade ~7-8mm in size)
Other characteristics
  • High material stability
  • 99.9999% confirmed purity
  • World record crystal size
  • Ready for exfoliation

 

Raman spectrum collected from SnS vdW crystals 

sns-raman.png

Selective area electron diffraction (SAED) data taken from SnS vdW crystals

                    saed-sns-crystals.png

EDS spectrum collected from SnS vdW single crystals

                     sns-eds.png

 

References

[1] C. Xin et.al. J. Phys. Chem. C, 2016, 120 (39), pp 22663–22669

Full Description
Formula: SnS
Qty
  • Description

    SnS crystal

     Tin sulfide (SnS) is a layered monochalcogenide semiconductor crystallizing in orthorhombic phase. The layers of cations are separated only by van der Waals (vdW) forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. Theoretical predictions show that SnS band gap values span from 1.4 eV to 1.9 eV from bulk to monolayer. SnS layers exhibit high in-plane anisotropy and high carrier mobility reaching as high as tens of thousands of cm2V–1s–1 which is superior to that of black phosphorus [1]. Their potential uses include photovoltaics, high electron mobility transistors, and catalytic energy conversion technologies. Our SnS crystal exhibit 99.9999% guaranteed purity, low defect concentration (<1E9cm-2), and high crystallinity. SnS crystals are grown either through flux vapor transport (flux method) or Bridgman technique.

    The properties of SnS van der Waals crystals 

    Sample size cm size crystals
    Material properties Indirect gap vdW semiconductor
    Crystal structure Orthorhombic phase 
    Degree of exfoliation Very easy to exfoliate
    Production method Flux zone (no halide contamination) larger ~10 mm or larger size or Bridgman growth (higher grade ~7-8mm in size)
    Other characteristics
    • High material stability
    • 99.9999% confirmed purity
    • World record crystal size
    • Ready for exfoliation

     

    Raman spectrum collected from SnS vdW crystals 

    sns-raman.png

    Selective area electron diffraction (SAED) data taken from SnS vdW crystals

                        saed-sns-crystals.png

    EDS spectrum collected from SnS vdW single crystals

                         sns-eds.png

     

    References

    [1] C. Xin et.al. J. Phys. Chem. C, 2016, 120 (39), pp 22663–22669