Description
We provide the world's largest size commercially available SnS crystals at the highest quality SnS and affordable prices. Our crystals exceed competing crystals both in size and quality.
Description
Tin sulfide (SnS) is a layered monochalcogenide semiconductor crystallizing in orthorhombic phase. The layers of cations are separated only by van der Waals (vdW) forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. Theoretical predictions show that SnS band gap values span from 1.4 eV to 1.9 eV from bulk to monolayer. SnS layers exhibit high in-plane anisotropy and high carrier mobility reaching as high as tens of thousands of cm2V–1s–1 which is superior to that of black phosphorus [1]. Their potential uses include photovoltaics, high electron mobility transistors, and catalytic energy conversion technologies. Our SnS crystal exhibit 99.9999% guaranteed purity, low defect concentration (<1E9cm-2), and high crystallinity. SnS crystals are grown either through flux vapor transport (flux method) or Bridgman technique.
The properties of SnS van der Waals crystals
| Sample size | Guaranteed the world record size: Larger than cm size crystals |
| Material properties | Indirect gap vdW semiconductor |
| Crystal structure | Orthorhombic phase |
| Degree of exfoliation | Very easy to exfoliate |
| Production method | Flux zone (no halide contamination) larger ~10 mm or larger size or Bridgman growth (higher grade ~7-8mm in size) |
| Other characteristics |
|
Raman spectrum collected from SnS vdW crystals
Selective area electron diffraction (SAED) data taken from SnS vdW crystals
EDS spectrum collected from SnS vdW single crystals
References
[1] C. Xin et.al. J. Phys. Chem. C, 2016, 120 (39), pp 22663–22669
Additional Information
Elements: |
Sn,S |
Element: |
Tin |
Element: |
Sulfur |
Formula: |
SnS |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
Flux |
Growth method: |
Bridgman |
Doping: |
Undoped |
