Ta2NiS5 Ta2NiS5 Ta2NiS5 Ta2NiS5

Ta2NiS5

$540.00

Ta2NiS5 is a narrow gap semiconductor (Eg~0.39 eV) with suspected exciton insulator behavior like observed in its sister compound Ta2NiSe5. Excitonic insulators are novel material systems exhibiting correlated electronic phases. Condensation of excitons to its ground state happens for a specific condition when the exciton binding energy (Eb) is larger than the band gap (Eg). The excitonic condensation in semiconductors occurs through a Bose-Einstein condensation process, while the condensation in semimetals occurs through the Bardeen-Cooper-Schrieffer (BCS) process.  The spontaneous band hybridization caused by the Coulomb attraction between the orthogonal conduction (electron) and valence (hole) bands opens the bandgap and drives the system into the insulating state

Properties of Ta2NiS5 crystals

ta2nis5-properties.png 

Atomic structure of Ta2NiS5 crystals

ta2nis5-atomic-structure.png

 

Raman spectrum of Ta2NiS5 crystals

ta2nis5-raman.png

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  • Description

    Ta2NiS5 is a narrow gap semiconductor (Eg~0.39 eV) with suspected exciton insulator behavior like observed in its sister compound Ta2NiSe5. Excitonic insulators are novel material systems exhibiting correlated electronic phases. Condensation of excitons to its ground state happens for a specific condition when the exciton binding energy (Eb) is larger than the band gap (Eg). The excitonic condensation in semiconductors occurs through a Bose-Einstein condensation process, while the condensation in semimetals occurs through the Bardeen-Cooper-Schrieffer (BCS) process.  The spontaneous band hybridization caused by the Coulomb attraction between the orthogonal conduction (electron) and valence (hole) bands opens the bandgap and drives the system into the insulating state

    Properties of Ta2NiS5 crystals

    ta2nis5-properties.png 

    Atomic structure of Ta2NiS5 crystals

    ta2nis5-atomic-structure.png

     

    Raman spectrum of Ta2NiS5 crystals

    ta2nis5-raman.png