Description
Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD GaSe samples measure nearly 1x1cm2 in size. The sample does not reach full continuity instead one can find many isolated GaSe triangles that measure 1L to 100s of layer in thickness. By default it is grown onto SiO2/Si or (100) GaAs substrates.
The characteristics of CVD GaSe
| Sample size | 1cm x 1cm might have uneven sample shape |
| Substrate type | SiO2/Si or GaAs |
| Coverage | Isolated triangles |
| Electrical properties | Direct gap semiconductor (bulk) indirect gap semiconductor (monolayer) |
| Crystal structure | Hexagonal phase |
| Unit cell parameters | a=b=0.376 nm, c=1.596 nm, α=β=90°, γ=120° |
| Production method | Chemical vapor deposition |
| Characterization methods | Raman, photoluminescence, TEM, EDS |
Additional Information
Elements: |
Ga,Se |
Element: |
Gallium |
Element: |
Selenium |
Formula: |
GaSe |
Material class: |
MX |
Properties: |
Semiconductor |
Properties: |
Luminescent |
Band gap range: |
VIS |
Growth method: |
CVD |
Doping: |
Undoped |
Thin-film type: |
Triangles |
Substrate: |
SiO2/Si |
Substrate: |
GaAs |
