Tin Selenide (SnSe)
We provide the world's largest size commercially available SnSe crystals at the highest quality SnSe and affordable prices. Our crystals exceed competing crystals both in size and quality.
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency. By default, we ship flux zone grown crystals for highest performance.
SnSe single crystal characteristics
Sample size Centimeter in size Material properties Thermoelectric and anisotropic semiconductor Crystal structure Pnma Degree of exfoliation Easy to exfoliate Production method Bridgman growth (6N pure) [CVT optional at 5.5N purity] Other characteristics
- No transport agents
- Low defect concentration
- High carrier mobility
Raman spectrum collected from SnSe crystals
Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
Phys. Rev. Lett. 125, 145301 (2020)