1 cm size high quality SnSe tin selenide crystals by 2Dsemiconductors USA Properties of SnSe Tin selenide crystals by 2Dsemiconductors USA Tin Selenide  (SnSe) XRD of SnSe Tin selenide crystals by 2Dsemiconductors USA

Tin Selenide (SnSe)

SKU: BLK-SnSe
$590.00

In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency. By default, we ship flux zone grown crystals for highest performance.

SnSe single crystal characteristics

Sample size Centimeter in size
Material properties Thermoelectric and anisotropic semiconductor 
Crystal structure Pnma
Degree of exfoliation Easy to exfoliate
Production method Bridgman growth (6N pure) [CVT optional at 5.5N purity]
Other characteristics
  • No transport agents 
  • Low defect concentration
  • High carrier mobility

Raman spectrum collected from SnSe crystals

snse-raman.png

References

Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
Phys. Rev. Lett. 125, 145301 (2020)

 

 

 

Full Description
Formula: SnSe
Qty
  • Description

    Tin Selenide (SnSe)

    In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency. By default, we ship flux zone grown crystals for highest performance.

    SnSe single crystal characteristics

    Sample size Centimeter in size
    Material properties Thermoelectric and anisotropic semiconductor 
    Crystal structure Pnma
    Degree of exfoliation Easy to exfoliate
    Production method Bridgman growth (6N pure) [CVT optional at 5.5N purity]
    Other characteristics
    • No transport agents 
    • Low defect concentration
    • High carrier mobility

    Raman spectrum collected from SnSe crystals

    snse-raman.png

    References

    Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
    Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
    Phys. Rev. Lett. 125, 145301 (2020)