WSe2 - Full Area Monolayer on SiO2/Si

SKU:
CVD-WSe2-ML-SiO2Si
Condition:
New
$690.00
Frequently bought together:

Description

Monolayer WSe2 transferred on SiO2/Si substrates. Full area WSe2 monolayers were synthesized first using our established CVD growth method on c-cut sapphire and transferred from sapphire onto SiO2/Si using polymer assisted stamping technique. Sample size measures 1cm in size. Due to the transfer process, the transferred monolayers may contain natural wrinkles and missing patches in some regions. The entire process is carried under Argon backfilled glovebox to ensure high-quality and residue free process. The samples are always sealed under Argon and pumped down to 1E-6 Torr to deliver quality samples for your research.

If your research needs designer 2D superlattices please see our transferred monolayer product line.

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Thermal oxide (SiO2/Si) substrates
Coverage Full Coverage Monolayer (transfer process may create wrinkles and small missing regions)
Electrical properties 1.62 eV Direct Bandgap Excitonic Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production method Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods Raman, photoluminescence, TEM, EDS

 

View AllClose

Additional Information

Elements:
W,Se
Formula:
WSe2
Substrate:
SiO2/Si
Element:
Tungsten
Element:
Selenium
Growth method:
CVD
Material class:
Dichalcogen
Thin-film type:
Monolayer
View AllClose