Black Arsenic phosphorus alloy SEM image of exfoliated Black Arsenic phosphorus alloy As elemental mapping of exfoliated Black Arsenic phosphorus alloy P elemental mapping of exfoliated Black Arsenic phosphorus alloy Exfoliatable black Arsenic phosphorus alloy

Black AsP alloy

$510.00

Black arsenic phosphorus (Black-AsP) alloys are 2D anisotropic materials which strong similarities to parent black-arsenic and black-phosphorus vdW crystals. Our b-AsP crystals were synthesized with high crystalline quality and electronic/optical performance in mind. We have utilized our patent pending high pressure chemical vapor transport technique (HP-CVT) using puratronic quality gray arsenic (99.9999% purity) and electronic grade red phosphorus (99.9999% purity) as starting materials. High pressure range allowed us to nearly eliminate additive mineralizers (SnI4) commonly used and known to introduce high defects in the crystal. With this technique we were able to reach unmatched 99.9998% or higher purity rates. Our B-AsP crystals come at As:P 0.6:0.4 to push the limit of IR semiconductor range. In this composition range, the materials exhibit perfect vdW layered character with easy exfoliation characteristics. Each order comes with large size crystals ranging from 7-10 mm in size sufficient for years of supply.

The properties of black As:P alloy vdW crystals

Sample size ~7-9 mm in size 
Material properties 2D anisotropic IR semiconductors (0.15 to 0.3 eV)
Crystal structure anisotropic phase
Unit cell parameters Depends on the composition As:P 0.6:0.4
Production method Chemical vapor transport 99.9995% purity
Characterization methods SIMS, XRD, EDS, Raman

Full Description
Formula: AsP
Qty
  • Description

    Black arsenic phosphorus (Black-AsP) alloys are 2D anisotropic materials which strong similarities to parent black-arsenic and black-phosphorus vdW crystals. Our b-AsP crystals were synthesized with high crystalline quality and electronic/optical performance in mind. We have utilized our patent pending high pressure chemical vapor transport technique (HP-CVT) using puratronic quality gray arsenic (99.9999% purity) and electronic grade red phosphorus (99.9999% purity) as starting materials. High pressure range allowed us to nearly eliminate additive mineralizers (SnI4) commonly used and known to introduce high defects in the crystal. With this technique we were able to reach unmatched 99.9998% or higher purity rates. Our B-AsP crystals come at As:P 0.6:0.4 to push the limit of IR semiconductor range. In this composition range, the materials exhibit perfect vdW layered character with easy exfoliation characteristics. Each order comes with large size crystals ranging from 7-10 mm in size sufficient for years of supply.

    The properties of black As:P alloy vdW crystals

    Sample size ~7-9 mm in size 
    Material properties 2D anisotropic IR semiconductors (0.15 to 0.3 eV)
    Crystal structure anisotropic phase
    Unit cell parameters Depends on the composition As:P 0.6:0.4
    Production method Chemical vapor transport 99.9995% purity
    Characterization methods SIMS, XRD, EDS, Raman