WS2 - Full Area Monolayer on SiO2/Si

SKU:
CVD-WS2-ML-SiO2Si
Condition:
New
$590.00
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Description

Monolayer WS2 transferred on SiO2/Si substrates. Full area WS2 monolayers were synthesized first using our established CVD growth method on c-cut sapphire and transferred from sapphire onto SiO2/Si using polymer assisted stamping technique. Sample size measures 1cm in size. Due to the transfer process, the transferred monolayers may contain natural wrinkles and missing patches in some regions. The entire process is carried under Argon backfilled glovebox to ensure high-quality and residue free process. The samples are always sealed under Argon and pumped down to 1E-6 Torr to deliver quality samples for your research.

If your research needs designer 2D superlattices please see our transferred monolayer product line [Link]

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Thermal oxide (SiO2/Si) substrates
Coverage Full Coverage Monolayer (transfer process may create wrinkles and small missing regions)
Electrical properties 2.02 eV Direct Bandgap Excitonic Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods Raman, photoluminescence, TEM, EDS

 

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Additional Information

Elements:
W,S
Element:
Tungsten
Element:
Sulfur
Formula:
WS2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Growth method:
CVD
Doping:
Undoped
Thin-film type:
Monolayer
Substrate:
SiO2/Si
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