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Superconductivity in monolayers. Currently, 2D aspect of this material remains largely unexplored. Iron Selenide Telluride (FeTeSe) is a member of layered materials. FeTeSe is considered as the parent material of the simplest family of iron-based...

Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure. It exhibits 2.7 eV and ideal band alignment to oxidization and reduction energy levels for hydrogen evolution reactions...

The properties of layered Ga2O3 crystals Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 3-3.5eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely...

GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material...

Gallium indium trisulfide or GaInS3 is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS3 crystals have been synthesized at 5.8N purity and high single...

GaPS4 is a 2D auxetic material with exotic mechanical and optical properties. In 2D form, it exhibits negative Poisson’s ratio both in-plane and out-of-plane directions. Bulk GaPS4 is a direct wide gap semiconductor with the computed band...

Multilayer gallium sulfide (GaS) layers have been deposited onto variety of substrates using our state-of-the-art atomic layer deposition (ALD) technique. GaS layers measure 100nm-1um in thickness. Our films are designed to achieve single crystalline...

We provide the world's largest size commercially available GaS crystals at the highest quality GaS and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Large size hexagonal phase GaS (Gallium sulfide)...

Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side...

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD...

We provide the world's largest size commercially available GaSe crystals at the highest quality GaSe and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Undoped GaSe crystals growth by Bridgman or...

The only commercially available GaSeTe alloys: Bulk Gallium selenide telluride has a band-gap at 1.89 eV and display strong photoluminescence at the same energy. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and...