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The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are perfectly layered in the c-axis direction, comes ready...

GaSTe crystals crystallize in hexagonal phase and exhibit 1.5 eV band gap in bulk and physical properties of GaSTe crystals as well as monolayers remain entirely unknown in the literature. Existing GaSTe crystals are first in the literature as well...

Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side...

We provide the world's largest size commercially available GaTe crystals at the highest quality GaTe and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Our single crystal monoclinic GaTe (Gallium...

We provide the world's largest size commercially available GeAs crystals at the highest quality GeAs and affordable prices. Our crystals exceed competing crystals both in size and quality. Description Our single crystal GeAs (Germanium arsenide) crystals...

GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities...

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to...

This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution. GeS crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by...

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to...

We provide the world's largest size commercially available GeSe crystals at the highest quality GeSe and affordable prices. World's only commercial high grade Bridgman GeSe crystals measure 0.6-1.2cm in size and exhibits clean cleavable surfaces. CVT...

This product contains GeSe suspended sheets in isopropanol (or custom) solution. GeSe crystals has been synthesized synthetically at 99.9995% purity and they have been dispersed into isopropanol (electronic grade chemical at 99.9999% purity) by...

GeSeTe is a layered phase change 2D anisotropic semiconductors. Much similar to black phosphorus (BPs), GeSe, GeTe, and GaTe, its crystalline structure exhibit highly anisotropic atomic arrangement. It has optical band gap between that of GeSe and GeTe...